Invention Grant
- Patent Title: Integrated electronic device and method for manufacturing thereof
- Patent Title (中): 集成电子装置及其制造方法
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Application No.: US13221733Application Date: 2011-08-30
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Publication No.: US09142666B2Publication Date: 2015-09-22
- Inventor: Donato Corona , Nicolo′ Frazzetto , Antonio Giuseppe Grimaldi , Corrado Iacono , Monica Micciche′
- Applicant: Donato Corona , Nicolo′ Frazzetto , Antonio Giuseppe Grimaldi , Corrado Iacono , Monica Micciche′
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: ITTO2010A0722 20100830
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L29/78 ; H01L21/04 ; H01L29/10 ; H01L29/66 ; H01L29/732 ; H01L29/808 ; H01L29/165 ; H01L21/02 ; H01L29/06 ; H01L29/08 ; H01L29/16 ; H01L29/40
Abstract:
An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.
Public/Granted literature
- US20120049902A1 INTEGRATED ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THEREOF Public/Granted day:2012-03-01
Information query
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