A method is provided for fabricating a fin field-effect transistor. The method includes providing a substrate having a first region and a second region; and forming a plurality of fin structures on a surface of the substrate. The method also includes forming a first mask layer having a plurality of first openings exposing the fin structures in the first region near the second region; and removing the fin structures in the first region near the second region. Further, the method includes forming a second mask layer on the fin structures in the second region; and removing the fin structures in the first region. Further, the method also includes forming fins by etching the substrate using the fin structures in the second region as an etching mask; and forming a gate structure and source/drain regions in the fins at both sides of the gate structure.