In at least one embodiment, the semiconductor component includes a semiconductor layer sequence with an active layer for generating an electromagnetic radiation. The semiconductor component includes a radiation-permeable element and a connecting element. The connecting element is layered in form and connects the radiation-permeable element and the semiconductor layer sequence to another mechanically. The connecting element is designed to be passed through by at least one part of the radiation generated in the active layer. A refractive index of the connecting means deviates from a refractive index of the semiconductor layer sequence by a maximum of 25%. The connecting element includes at least two principal components, which are solids at a temperature of 300 K. At least one of the principal components has a melting temperature of no more than 750 K.