Invention Grant
- Patent Title: Plasma etching method and plasma processing apparatus
- Patent Title (中): 等离子体蚀刻方法和等离子体处理装置
-
Application No.: US13854412Application Date: 2013-04-01
-
Publication No.: US09147580B2Publication Date: 2015-09-29
- Inventor: Takayuki Katsunuma , Masanobu Honda , Hironobu Ichikawa , Jin Kudo
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2012-086179 20120405
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/67 ; H01J37/32 ; H01L21/311 ; H01L21/027
Abstract:
A plasma etching method for plasma etching, in a processing chamber, an antireflection film laminated on an organic film formed on a substrate by using an etching mask made of a resist film formed on the antireflection film, the plasma etching method includes: depositing a Si-containing compound on the etching mask made of the resist film by using plasma of Si-containing gas in the processing chamber; and etching the antireflection film in a state where the Si-containing compound is deposited on the etching mask.
Public/Granted literature
- US20130267094A1 PLASMA ETCHING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2013-10-10
Information query
IPC分类:
