Invention Grant
- Patent Title: Semiconductor power converter and method of manufacturing the same
- Patent Title (中): 半导体功率转换器及其制造方法
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Application No.: US14025019Application Date: 2013-09-12
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Publication No.: US09147673B2Publication Date: 2015-09-29
- Inventor: Hideo Nishiuchi , Kazuhiro Ueda , Takayuki Masunaga , Naotake Watanabe , Yoshiyuki Shimizu , Takashi Togasaki , Koji Maruno
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Baker Botts L.L.P.
- Priority: JP2012-240990 20121031; JP2013-137218 20130628
- Main IPC: H01L23/10
- IPC: H01L23/10 ; H01L25/00 ; H01L23/50 ; H01L25/07 ; H01L23/473 ; H01L23/495 ; H01L21/48 ; H01L23/40 ; H01L23/31

Abstract:
According to one embodiment, a semiconductor power converter includes first and second electrical conductors opposed to each other, first and second semiconductor elements joined to a first joint surface of the first electrical conductor, first and second convex electrical conductors joined to the first and second semiconductor elements, a junction joined to the first and second convex electrical conductors and a second joint surface of the second electrical conductor, power terminals, signal terminals, and an envelope sealing the constituent members. The envelope includes a flat bottom surface which extends perpendicular to the semiconductor elements and in which first and second bottom surfaces of the electrical conductors are exposed.
Public/Granted literature
- US20140117526A1 SEMICONDUCTOR POWER CONVERTER AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-05-01
Information query
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