Invention Grant
- Patent Title: Density gradient cell array
- Patent Title (中): 密度梯度单元阵列
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Application No.: US13721552Application Date: 2012-12-20
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Publication No.: US09147694B2Publication Date: 2015-09-29
- Inventor: Yu-Jung Chang , C. R. Hsu , Chin-Chang Hsu , Wen-Ju Yang , Chung-min Fu
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L27/118 ; H01L27/02

Abstract:
One or more techniques or systems for mitigating density gradients between two or more regions of cells are provided herein. In some embodiments, an array of cells is associated with a dummy region. For example, the array of cells includes an array of gates and an array of OD regions. In some embodiments, the array of gates includes a first set of gates associated with a first gate dimension and a second set of gates associated with a second gate dimension. In some embodiments, the array of OD regions includes a first set of OD regions associated with a first OD dimension and a second set of OD regions associated with a second OD dimension. In this manner, at least one of a pattern density, gate density, or OD density is customized to a region associated with active cells, thus mitigating density gradients between respective regions.
Public/Granted literature
- US20140151751A1 DENSITY GRADIENT CELL ARRAY Public/Granted day:2014-06-05
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