Invention Grant
- Patent Title: Hybrid bipolar junction transistor
- Patent Title (中): 混合双极结晶体管
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Application No.: US14184384Application Date: 2014-02-19
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Publication No.: US09147715B2Publication Date: 2015-09-29
- Inventor: Ali Afzali-Ardakani , Bahman Hekmatshoartabari , Tak H. Ning , Davood Shahrjerdi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Ellenbogen & Kammer, LLP
- Agent Louis J. Percello
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L27/32 ; H01L29/73

Abstract:
Bipolar junction transistors including inorganic channels and organic emitter junctions are used in some applications for forming high resolution active matrix displays. Arrays of such bipolar junction transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes.
Public/Granted literature
- US20150236078A1 HYBRID BIPOLAR JUNCTION TRANSISTOR Public/Granted day:2015-08-20
Information query
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