Invention Grant
US09147726B2 Semiconductor wafer with a layer of AlzGa1-zN and process for producing it
有权
具有AlzGa1-zN层的半导体晶片及其制造方法
- Patent Title: Semiconductor wafer with a layer of AlzGa1-zN and process for producing it
- Patent Title (中): 具有AlzGa1-zN层的半导体晶片及其制造方法
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Application No.: US14197296Application Date: 2014-03-05
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Publication No.: US09147726B2Publication Date: 2015-09-29
- Inventor: Sarad Bahadur Thapa , Thomas Schroeder , Lidia Tarnawska
- Applicant: Siltronic AG
- Applicant Address: DE Munich
- Assignee: Siltronic AG
- Current Assignee: Siltronic AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: EP13158844 20130312
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L21/02
Abstract:
A semiconductor wafer contains the following layers in the given order: a monocrystalline substrate wafer (1) consisting predominantly of silicon and having a (111) surface orientation, a monocrystalline layer (3) of Sc2O3 having a (111) surface orientation, a monocrystalline layer (4) of ScN having a (111) surface orientation, and a monocrystalline layer (6) of AlzGa1-zN with 0≦z≦1 having a (0001) surface orientation, the semiconductor wafers are produced by appropriate deposition of the respective layers.
Public/Granted literature
- US20140264776A1 Semiconductor Wafer With A LayerOf AlzGa1-zN and Process For Producing It Public/Granted day:2014-09-18
Information query
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