A thin film transistor includes a polymeric material post on a substrate. An inorganic material cap, covering the top of the post, extends beyond first and second edges of the post to define first and second reentrant profiles, respectively. A conformal conductive gate layer is over the edge of the post, a conformal insulating layer is on the gate layer, and a conformal semiconductor layer is on the insulating layer in the first reentrant profile. A first electrode is in contact with a first portion of the semiconductor layer over the cap and extends to a location adjacent to the second edge. A second electrode is in contact with a second portion of the semiconductor layer not over the post, and adjacent to the first edge such that a distance between the first electrode and second electrode is greater than zero when measured orthogonally to the substrate surface.