Invention Grant
- Patent Title: Optoelectronic semiconductor chip, method of fabrication and application in an optoelectronic component
- Patent Title (中): 光电子半导体芯片,制造和应用于光电子器件的方法
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Application No.: US13825156Application Date: 2011-09-15
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Publication No.: US09147806B2Publication Date: 2015-09-29
- Inventor: Bernd Böhm , Gertrud Kräuter , Andreas Plöβl
- Applicant: Bernd Böhm , Gertrud Kräuter , Andreas Plöβl
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductor GmbH
- Current Assignee: OSRAM Opto Semiconductor GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- International Application: PCT/EP2011/066008 WO 20110915
- International Announcement: WO2012/038318 WO 20120329
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/44 ; H01L31/0236 ; H01L31/054

Abstract:
An optoelectronic semiconductor chip includes an active layer with a first and a second major face, including a semiconductor material which emits or receives radiation when the semiconductor chip is in operation; a patterned layer including three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation, wherein the patterned layer includes an inorganic-organic hybrid material.
Public/Granted literature
- US20140145228A1 OPTOELECTRONIC SEMICONDUCTOR CHIP, METHOD OF FABRICATION AND APPLICATION IN AN OPTOELECTRONIC COMPONENT Public/Granted day:2014-05-29
Information query
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