Invention Grant
- Patent Title: Crystal unit and method for fabricating the same
- Patent Title (中): 晶体单元及其制造方法
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Application No.: US13629619Application Date: 2012-09-28
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Publication No.: US09147831B2Publication Date: 2015-09-29
- Inventor: Tomotaka Kuroda , Makoto Hatano , Shigeharu Monoe
- Applicant: NIHON DEMPA KOGYO CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: NIHON DEMPA KOGYO CO., LTD.
- Current Assignee: NIHON DEMPA KOGYO CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Jianq Chyun IP Office
- Priority: JP2011-219204 20111003
- Main IPC: H01L41/22
- IPC: H01L41/22 ; C23F1/00 ; H01L41/332 ; H03H9/05 ; H03H9/10 ; H01L41/053

Abstract:
A method for fabricating a crystal unit, including a preparing step, a bonding step, and a separating step, is provided. The preparing step prepares a quartz plate and a supporting substrate with a recess that is larger than the vibrating region on a surface of the supporting substrate. The recess corresponds to a vibrating region in the crystal unit. The bonding step bonds the quartz plate to the surface of the supporting substrate such that the quartz plate is separated from the supporting substrate in the recess. The separating step separates the quartz plate into the vibrating region and the framing portion by performing dry etching on the quartz plate such that the quartz plate has a shape that connects the vibrating region to the framing portion via a supporting beam. The framing portion surrounds the vibrating region.
Public/Granted literature
- US20130082573A1 CRYSTAL UNIT AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-04-04
Information query
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