Invention Grant
- Patent Title: Monolithic integration of field-plate and T-gate devices
- Patent Title (中): 现场板和T型栅极器件的整体集成
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Application No.: US13971827Application Date: 2013-08-20
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Publication No.: US09148092B1Publication Date: 2015-09-29
- Inventor: David F. Brown , Miroslav Micovic
- Applicant: HRL Laboratories, LLC
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories, LLC
- Current Assignee: HRL Laboratories, LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L29/15 ; H03F1/26 ; H01L29/06 ; H01L29/40
Abstract:
A method of fabricating amplifiers, includes monolithically integrating a field-plate transistor and T-gate transistor on a single wafer. A device includes a monolithically integrated field-plate transistor and T-gate transistor on a single wafer.
Information query
IPC分类:
