Invention Grant
US09150406B2 Multi-axis integrated MEMS devices with CMOS circuits and method therefor
有权
具有CMOS电路的多轴集成MEMS器件及其方法
- Patent Title: Multi-axis integrated MEMS devices with CMOS circuits and method therefor
- Patent Title (中): 具有CMOS电路的多轴集成MEMS器件及其方法
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Application No.: US14084415Application Date: 2013-11-19
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Publication No.: US09150406B2Publication Date: 2015-10-06
- Inventor: Xiao (Charles) Yang
- Applicant: mCube Inc.
- Applicant Address: US CA San Jose
- Assignee: mCube Inc.
- Current Assignee: mCube Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend and Stockton LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B81C1/00 ; H01L27/146 ; B81B7/02 ; H01L27/06

Abstract:
An integrated multi-axis mechanical device and integrated circuit system. The integrated system can include a silicon substrate layer, a CMOS device region, four or more mechanical devices, and a wafer level packaging (WLP) layer. The CMOS layer can form an interface region, on which any number of CMOS and mechanical devices can be configured. The mechanical devices can include MEMS devices configured for multiple axes or for at least a first direction. The CMOS layer can be deposited on the silicon substrate and can include any number of metal layers and can be provided on any type of design rule. The integrated MEMS devices can include, but not exclusively, any combination of the following types of sensors: magnetic, pressure, humidity, temperature, chemical, biological, or inertial. Furthermore, the overlying WLP layer can be configured to hermetically seal any number of these integrated devices.
Public/Granted literature
- US20140162393A1 MULTI-AXIS INTEGRATED MEMS DEVICES WITH CMOS CIRCUITS AND METHOD THEREFOR Public/Granted day:2014-06-12
Information query
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