Invention Grant
US09150411B2 Fusing method of substrate layer, manufacturing method of microfluidic chip and fusing apparatus of substrate layer
有权
衬底层的熔合方法，微流控芯片的制造方法和衬底层的定影装置
- Patent Title: Fusing method of substrate layer, manufacturing method of microfluidic chip and fusing apparatus of substrate layer
- Patent Title (中): 衬底层的熔合方法，微流控芯片的制造方法和衬底层的定影装置
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Application No.: US13663211Application Date: 2012-10-29
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Publication No.: US09150411B2Publication Date: 2015-10-06
- Inventor: Naoki Okawa , Yukie Suzuki
- Applicant: Sony Corporation , Sony DADC Corporation
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: SONY CORPORATION,SONY DADC CORPORATION
- Current Assignee: SONY CORPORATION,SONY DADC CORPORATION
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2011-243851 20111107
- Main IPC: B29C65/00
- IPC: B29C65/00 ; B81C3/00 ; B29C65/48
Abstract:
Provided is a fusing method of a substrate layer including: treating a joining surface of a substrate layer formed from a resin using an organic solvent having solubility with respect to the resin; and heating the treated substrate layer at less than a glass transition temperature or a softening point temperature of the resin and crimping the heated substrate layer.
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