There is provided a silica crucible for pulling a silicon single crystal, comprising silica glass and having a two-layer structure of an outer layer and an inner layer, wherein the inner layer, in a sectional side view of the crucible, has a wavy inner surface shape having mountain parts and valley parts at least between a start position and an end position for the pulling of a silicon single crystal in a silicon melt surface, and when a distance from an upper opening end of the crucible to the start position for the pulling of the silicon single crystal is 100, only a crucible portion from the upper opening end to a position within a range of 40 to 100 is crystalline.