Invention Grant
- Patent Title: Method for manufacturing semiconductor device including organic semiconductor
- Patent Title (中): 包括有机半导体的半导体器件的制造方法
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Application No.: US11659089Application Date: 2005-08-05
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Publication No.: US09150953B2Publication Date: 2015-10-06
- Inventor: Yoshiharu Hirakata , Shunpei Yamazaki
- Applicant: Yoshiharu Hirakata , Shunpei Yamazaki
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2004-236156 20040813
- International Application: PCT/JP2005/014801 WO 20050805
- International Announcement: WO2006/016669 WO 20060216
- Main IPC: H01L51/40
- IPC: H01L51/40 ; C23C14/22 ; C23C14/12 ; C23C14/24 ; C23C14/56 ; H01L51/00 ; H01L51/05
Abstract:
The present invention provides a method for manufacturing a semiconductor device which can reduce characteristic deterioration due to impurity incorporation. The present invention also provides a semiconductor device and an electric appliance with reduced characteristic deterioration due to the impurity incorporation. The method for manufacturing a semiconductor device has a process for depositing an organic semiconductor. In addition, a process for introducing and exhausting gas having low reactivity while heating a treater so that temperature in the inside of the treater is higher than sublimation temperature of the organic semiconductor after taking a subject deposited with the organic semiconductor from the treater.
Public/Granted literature
- US20080296560A1 Method for Manufacturing Semiconductor Device Public/Granted day:2008-12-04
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