Invention Grant
- Patent Title: Monolithic aluminum alloy target and method of manufacturing
- Patent Title (中): 单片铝合金靶材及其制造方法
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Application No.: US13951991Application Date: 2013-07-26
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Publication No.: US09150956B2Publication Date: 2015-10-06
- Inventor: Weifang Miao , David B. Smathers , Robert S. Bailey
- Applicant: Tosoh SMD, Inc.
- Applicant Address: US OH Grove City
- Assignee: Tosoh SMD, Inc.
- Current Assignee: Tosoh SMD, Inc.
- Current Assignee Address: US OH Grove City
- Agency: Wegman, Hessler & Vanderburg
- Main IPC: C23C14/34
- IPC: C23C14/34 ; B21C23/00 ; B21J1/04 ; B21J1/06 ; C22C21/00 ; C22F1/04

Abstract:
Aluminum or aluminum alloy sputter targets and methods of making same are provided. The pure aluminum or aluminum alloy is mechanically worked to produce a circular blank, and then the blank is given a recrystallization anneal to achieve desirable grain size and crystallographic texture. A 10-50% additional strain is provided to the blank step after the annealing to increase the mechanical strength. Further, in a flange area of the target, the strain is greater than in the other target areas with the strain in the flange area being imparted at a rate of about 20-60% strain. The blank is then finished to form a sputtering target with desirable crystallographic texture and adequate mechanical strength.
Public/Granted literature
- US20130306467A1 MONOLITHIC ALUMINUM ALLOY TARGET AND METHOD OF MANUFACTURING Public/Granted day:2013-11-21
Information query
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