Invention Grant
US09150957B2 Method of making a sputter target and sputter targets made thereby
有权
制造溅射靶的方法和由此制成的溅射靶
- Patent Title: Method of making a sputter target and sputter targets made thereby
- Patent Title (中): 制造溅射靶的方法和由此制成的溅射靶
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Application No.: US12998555Application Date: 2009-11-03
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Publication No.: US09150957B2Publication Date: 2015-10-06
- Inventor: M. Kirk Holcomb , David B. Smathers
- Applicant: M. Kirk Holcomb , David B. Smathers
- Applicant Address: US OH Grove City
- Assignee: Tosoh SMD, Inc.
- Current Assignee: Tosoh SMD, Inc.
- Current Assignee Address: US OH Grove City
- Agency: Wegman, Hessler & Vanderburg
- International Application: PCT/US2009/005945 WO 20091103
- International Announcement: WO2010/051040 WO 20100506
- Main IPC: C23C14/14
- IPC: C23C14/14 ; C23C14/34 ; C22F1/16 ; C22C27/02 ; C22F1/18

Abstract:
A method of making sputter targets from a BCC metal or BCC metal alloy is provided. The ingot is e-beamed melted and subjected to vacuum arc reduction. The ingot is then tri-axially forged, keeping the centerline of the ingot in the center of the ingot during the tri-axial forging step. The ingot is then vacuum annealed and clock rolled. During the clock rolling, the center line of the ingot is maintained in the center of the ingot and perpendicular to the compressive forces used during the clock rolling. The clock rolled ingot is then vacuum annealed and provided in a near net shape for usage as a sputter target. Tantalum target materials are disclosed having a purity of at least 99.5% and an interstitial content (CONH) of less than about 25 ppm. Tantalum targets, in accordance with the invention, have a grain size of about 50 to 100 microns and a mixed {100}/{111} texture with a higher % {111} gradient towards the center.
Public/Granted literature
- US20110214987A1 METHOD OF MAKING A SPUTTER TARGET AND SPUTTER TARGETS MADE THEREBY Public/Granted day:2011-09-08
Information query
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