This disclosure describes techniques for regulating a kILIS factor (i.e., a load current-to-sensing current ratio) of a current sensing power metal-oxide-semiconductor field-effect transistor (MOSFET). The techniques may include generating a reference voltage based on a configurable function that defines the reference voltage as a function of two or more main terminal voltages which are obtained at two or more different locations on a metallization that forms a main terminal of a current sensing power MOSFET, and regulating a sensing terminal of the current sensing power MOSFET at a voltage that is determined based on the reference voltage. Using a configurable function of two or more main terminal voltages to regulate a sensing terminal of a current sensing power MOSFET may allow the voltage at which the sensing terminal is regulated to be trimmed in order to improve the accuracy of the kILIS factor produced by the current sensing power MOSFET.