Invention Grant
- Patent Title: Vapor deposition system
- Patent Title (中): 气相沉积系统
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Application No.: US13025133Application Date: 2011-02-10
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Publication No.: US09157152B2Publication Date: 2015-10-13
- Inventor: Jacques Faguet , Eric M. Lee
- Applicant: Jacques Faguet , Eric M. Lee
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: C23C16/452
- IPC: C23C16/452 ; C23C16/44 ; C23C16/455 ; C23C16/48 ; C23C16/50

Abstract:
A system for depositing a thin film on a substrate using a vapor deposition process is described. The deposition system includes a process chamber having a vacuum pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate, a non-ionizing heat source separate from the substrate holder that is configured to receive a flow of the film forming composition and to cause thermal fragmentation of one or more constituents of the film forming composition when heated, and one or more power sources coupled to the heating element array and configured to provide an electrical signal to the at least one heating element zone. The deposition system further includes a remote source coupled to the process chamber and configured to supply a reactive composition to the process chamber to chemically interact with the substrate, wherein the remote source comprises a remote plasma generator, a remote radical generator, a remote ozone generator, or a water vapor generator, or a combination of two or more thereof.
Public/Granted literature
- US20110126762A1 VAPOR DEPOSITION SYSTEM Public/Granted day:2011-06-02
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