Invention Grant
US09159553B2 Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface
有权
部分或完全松弛的合金上的半极性或非极性氮化物器件在异质界面处具有失配位错
- Patent Title: Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface
- Patent Title (中): 部分或完全松弛的合金上的半极性或非极性氮化物器件在异质界面处具有失配位错
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Application No.: US12861532Application Date: 2010-08-23
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Publication No.: US09159553B2Publication Date: 2015-10-13
- Inventor: Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
- Applicant: Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01L21/02 ; B82Y20/00 ; H01L33/00 ; H01S5/32 ; H01S5/343 ; H01L33/06 ; H01L33/12 ; H01L33/16 ; H01L33/32 ; H01S5/20 ; H01S5/22
Abstract:
A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.
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