Invention Grant
- Patent Title: Methods of forming semiconductor device structures
- Patent Title (中): 形成半导体器件结构的方法
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Application No.: US13590928Application Date: 2012-08-21
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Publication No.: US09159677B2Publication Date: 2015-10-13
- Inventor: Xinyu Zhang , Soichi Sugiura , Yu Zeng
- Applicant: Xinyu Zhang , Soichi Sugiura , Yu Zeng
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/532

Abstract:
A method of forming a semiconductor device structure comprises forming at least one reflective structure comprising at least two dielectric materials having different refractive indices over at least one radiation-sensitive structure, the at least one reflective structure configured to substantially reflect therefrom radiation within a predetermined wavelength range and to substantially transmit therethrough radiation within a different predetermined wavelength range. Additional methods of forming a semiconductor device structure are described. Semiconductor device structures are also described.
Public/Granted literature
- US20140054755A1 METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES Public/Granted day:2014-02-27
Information query
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