Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14082977Application Date: 2013-11-18
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Publication No.: US09159678B2Publication Date: 2015-10-13
- Inventor: Li-Hui Cheng , Po-Hao Tsai , Jui-Pin Hung
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/00 ; H01L21/56 ; H01L23/31 ; H01L23/482

Abstract:
A semiconductor device includes a die, a conductive post disposed adjacent to the die, and a molding surrounding the conductive post and the die, the molding includes a protruded portion protruded from a sidewall of the conductive post and disposed on a top surface of the conductive post. Further, a method of manufacturing a semiconductor device includes disposing a die, disposing a conductive post adjacent to the die, disposing a molding over the conductive post and the die, removing some portions of the molding from a top of the molding, and forming a recess of the molding above a top surface of the conductive post.
Public/Granted literature
- US20150137351A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-05-21
Information query
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