Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13949185Application Date: 2013-07-23
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Publication No.: US09159681B2Publication Date: 2015-10-13
- Inventor: Sadao Nakayama , Yoshihiro Matsuura
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2012-168541 20120730
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L23/498 ; H01L23/31 ; H01L23/50 ; H01L21/56

Abstract:
A semiconductor device which uses a semiconductor chip originally designed for flip chip bonding and is assembled by a wire bonding process to reduce the cost of assembling a semiconductor product. A second electrode pad group and a fourth electrode pad group are located in the central area of the semiconductor chip and a first electrode pad group and a third electrode pad group are located adjacently to the two long sides of the semiconductor chip. The electrode pads of each electrode group are electrically coupled with a plurality of conductive wires. The layouts of the wiring layers formed in an interconnection substrate are modified so that the wire-bonded semiconductor device is the same as a flip-chip-bonded semiconductor device in terms of the positions of input/output signals.
Public/Granted literature
- US20140027919A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-01-30
Information query
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