Invention Grant
- Patent Title: Hybrid substrate with high density and low density substrate areas, and method of manufacturing the same
- Patent Title (中): 具有高密度和低密度衬底区域的混合衬底及其制造方法
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Application No.: US14063699Application Date: 2013-10-25
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Publication No.: US09159693B2Publication Date: 2015-10-13
- Inventor: Jin Won Choi
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2012-0150694 20121221
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L23/498 ; H05K3/46 ; H05K1/18 ; H05K3/00

Abstract:
Provided is a hybrid substrate with high density and low density substrate areas and a method of manufacturing the same. The hybrid substrate with high density and low density substrate areas includes a low density substrate layer having a cavity and a low density area, a high density substrate layer mounted in the cavity of the low density substrate layer and formed of a high density area having a higher pattern density than that of the low density area, an insulating support layer comprising a deposition area formed on upper portions, lower portions and the upper and lower portions of the high density substrate layer and the low density substrate layer, insulating layer vias passing through the deposition area of the insulating support layer and connected to patterns of the high density substrate layer and the low density substrate layer, and an outer pattern layer.
Public/Granted literature
- US20140175672A1 HYBRID SUBSTRATE WITH HIGH DENSITY AND LOW DENSITY SUBSTRATE AREAS, AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-06-26
Information query
IPC分类: