Invention Grant
- Patent Title: Method for forming voids of structure
- Patent Title (中): 形成结构空隙的方法
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Application No.: US14219042Application Date: 2014-03-19
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Publication No.: US09159697B2Publication Date: 2015-10-13
- Inventor: Hui-Ying Chou , Lee-Chieh Kang
- Applicant: Wistron Corporation
- Applicant Address: TW New Taipei
- Assignee: WISTRON CORPORATION
- Current Assignee: WISTRON CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW102137165A 20131015
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/44 ; H01L23/00 ; H01L23/13

Abstract:
A method for forming voids corresponding to pads of SMT components is provided. The method comprises following steps: One or more condition parameters are inputted into a searching unit. The searching unit searches all of the pads with reference to the condition parameters to obtain a pre-selected group of pads. A judgment unit is provided to determine whether each pad of the pre-selected group of pads meets a pre-determined processing requirement to generate a to-be-processed group of pads. An execution unit executes a void formation step with reference to corner coordinates of each of the to-be-processed group of pads, so as to form at least a void at the portion of a contact surface corresponding to a corner of the pad. In an embodiment, four voids which are related to respective corners of each pad of the to-be-processed group are formed at the contact surface accordingly.
Public/Granted literature
- US20150102494A1 METHOD FOR FORMING VOIDS AND STRUCTURE WITH VOIDS FORMED USING THE SAME Public/Granted day:2015-04-16
Information query
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