Invention Grant
- Patent Title: Image sensor and method for fabricating the same
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US14106820Application Date: 2013-12-15
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Publication No.: US09159755B2Publication Date: 2015-10-13
- Inventor: Chung-Seok Choi , Jong-Chae Kim , Do-Hwan Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0105619 20130903
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L27/146
Abstract:
An image sensor includes a photoelectric conversion region formed in a substrate, an interlayer insulation layer formed over a front side of the substrate, a carbon-containing layer doped with impurities and formed over a back side of the substrate, and a color filter and a micro-lens formed over the carbon-containing layer.
Public/Granted literature
- US20150123226A1 IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-05-07
Information query
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