A solid state imaging device includes a semiconductor substrate having an element isolating layer and a plurality of photoelectric conversion elements each formed in a respective one of a plurality of pixel regions that are isolated from each other by the element isolating layer, an interlayer dielectric layer having wires formed on a first surface of the semiconductor substrate, and a color filter layer having pigmented films of a plurality of colors, formed on a second surface of the semiconductor substrate and in the pixel regions. The element isolating layer has a part projecting from the second surface, and at least part of the pigmented films is formed in a space defined by the second surface and the projecting part of the element isolating layer.