Invention Grant
US09161438B2 Stress buffer layer and method for producing same 有权
应力缓冲层及其制造方法

Stress buffer layer and method for producing same
Abstract:
A stress buffer sheet 10 is constituted by arranging external conductive layers 16A and 16B on the front and rear main surfaces of a through electrode layer 13. Columnar internal electrodes 14 are formed using a porous oxide base material 30 formed by anodic oxidation of valve metal; the oxide base material 30 is selectively removed after the internal electrodes 14 have been formed, and a resin 12 is filled in a resultant void space. The resin 12 has a small Young's modulus and can be deformed together with the internal electrode 14. In a structure having a wiring board 20 and an electronic component 24 connected through the stress buffer sheet 10, when stress acts on the joint portion during mounting of the electronic component 24, the whole of the through electrode layer 13 is deformed so that the stress is absorbed or released.
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