Invention Grant
- Patent Title: Method for manufacturing semiconductor device, method for processing substrate, substrate processing apparatus and recording medium
- Patent Title (中): 半导体装置的制造方法，基板的处理方法，基板处理装置和记录介质
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Application No.: US14240897Application Date: 2012-08-01
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Publication No.: US09165761B2Publication Date: 2015-10-20
- Inventor: Yoshiro Hirose , Ryuji Yamamoto
- Applicant: Yoshiro Hirose , Ryuji Yamamoto
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2011-183815 20110825
- International Application: PCT/JP2012/069562 WO 20120801
- International Announcement: WO2013/027549 WO 20130228
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; C23C16/36 ; C23C16/40 ; C23C16/455 ; H01L21/67 ; C23C16/30 ; C23C16/52
Abstract:
There is provided a method for manufacturing a semiconductor device, including forming a thin film containing a specific element and having a prescribed composition on a substrate by alternately performing the following steps prescribed number of times: forming a first layer containing the specific element, nitrogen, and carbon on the substrate by alternately performing prescribed number of times: supplying a first source gas containing the specific element and a halogen-group to the substrate, and supplying a second source gas containing the specific element and an amino-group to the substrate, and forming a second layer by modifying the first layer by supplying a reactive gas different from each of the source gases, to the substrate.
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