Invention Grant
- Patent Title: Memory cell and method of manufacturing a memory cell
- Patent Title (中): 存储单元和制造存储单元的方法
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Application No.: US13531792Application Date: 2012-06-25
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Publication No.: US09165932B2Publication Date: 2015-10-20
- Inventor: Vincent Pott , Navab Singh
- Applicant: Vincent Pott , Navab Singh
- Applicant Address: SG Singapore
- Assignee: Agency for Science, Technology and Research
- Current Assignee: Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore
- Agency: Crockett & Crockett, PC
- Agent K. David Crockett, Esq.; Niky Economy Syrengelas, Esq.
- Priority: SG201104680-2 20110624
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/105 ; H01L29/68 ; G11C23/00

Abstract:
A memory cell and a method of manufacturing a memory cell are provided. The memory cell includes a substrate; at least one first electrode disposed above the substrate; at least one second electrode disposed above the at least one first electrode; a moveable electrode disposed between the at least one first electrode and the at least one second electrode; wherein the moveable electrode is configured to move between the at least one first electrode and the at least one second electrode; wherein the moveable electrode comprises metal.
Public/Granted literature
- US20130020631A1 Memory Cell and Method of Manufacturing a Memory Cell Public/Granted day:2013-01-24
Information query
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