Invention Grant
US09165932B2 Memory cell and method of manufacturing a memory cell 有权
存储单元和制造存储单元的方法

Memory cell and method of manufacturing a memory cell
Abstract:
A memory cell and a method of manufacturing a memory cell are provided. The memory cell includes a substrate; at least one first electrode disposed above the substrate; at least one second electrode disposed above the at least one first electrode; a moveable electrode disposed between the at least one first electrode and the at least one second electrode; wherein the moveable electrode is configured to move between the at least one first electrode and the at least one second electrode; wherein the moveable electrode comprises metal.
Public/Granted literature
Information query
Patent Agency Ranking
0/0