Invention Grant
- Patent Title: Resistive memory
- Patent Title (中): 电阻记忆
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Application No.: US14150654Application Date: 2014-01-08
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Publication No.: US09165979B2Publication Date: 2015-10-20
- Inventor: Bao Tran
- Applicant: Bao Tran
- Agency: Tran Associates
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; G11C11/21 ; B82Y10/00 ; G11B9/14 ; G11C11/54 ; G11C13/02 ; G11C13/04 ; H01L51/42 ; G11C13/00
Abstract:
A memory device includes an upper conductive layer, a lower layer, and a resistive, optical or magnetic matrix positioned between the upper and lower layers.
Public/Granted literature
- US20140126269A1 RESISTIVE MEMORY Public/Granted day:2014-05-08
Information query
IPC分类:
