Invention Grant
US09166015B1 Three dimensional semiconductor integrated circuit having gate pick-up line and method of manufacturing the same 有权
具有栅极拾取线的三维半导体集成电路及其制造方法

Three dimensional semiconductor integrated circuit having gate pick-up line and method of manufacturing the same
Abstract:
A 3D semiconductor integrated circuit having a gate pick-up line and a method of manufacturing the same, wherein the semiconductor integrated circuit includes a plurality of active pillars formed in a gate pick-up region, buffer layers formed on the respective active pillars in the gate pick-up region, gates each surrounding an outer circumference of the corresponding active pillar and the corresponding buffer layer, and a gate pick-up line electrically coupled to the gates.
Information query
Patent Agency Ranking
0/0