Invention Grant
- Patent Title: Three dimensional semiconductor integrated circuit having gate pick-up line and method of manufacturing the same
- Patent Title (中): 具有栅极拾取线的三维半导体集成电路及其制造方法
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Application No.: US14303359Application Date: 2014-06-12
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Publication No.: US09166015B1Publication Date: 2015-10-20
- Inventor: Isaac Chung , Jin Ha Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0037800 20140331
- Main IPC: H01L21/58
- IPC: H01L21/58 ; H01L29/423 ; H01L45/00 ; H01L29/66 ; H01L29/78 ; H01L27/24

Abstract:
A 3D semiconductor integrated circuit having a gate pick-up line and a method of manufacturing the same, wherein the semiconductor integrated circuit includes a plurality of active pillars formed in a gate pick-up region, buffer layers formed on the respective active pillars in the gate pick-up region, gates each surrounding an outer circumference of the corresponding active pillar and the corresponding buffer layer, and a gate pick-up line electrically coupled to the gates.
Public/Granted literature
Information query
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