A power semiconductor device with an electrostatic discharge (ESD) structure includes an N-type semiconductor substrate, at least one ESD device, and at least one trench type transistor device. The N-type semiconductor has at least two trenches, and the ESD device is disposed in the N-type semiconductor substrate between the trenches. The ESD device includes a P-type first doped region, and an N-type second doped region and an N-type third doped region disposed in the P-type first doped region. The N-type second doped region is electrically connected to a gate of the trench type transistor device, and the N-type third doped region is electrically connected to a drain of the trench type transistor device.