Invention Grant
- Patent Title: Semiconductor heterobarrier electron device and method of making
- Patent Title (中): 半导体异质电子器件及其制造方法
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Application No.: US13462935Application Date: 2012-05-03
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Publication No.: US09166068B2Publication Date: 2015-10-20
- Inventor: Pankaj B. Shah
- Applicant: Pankaj B. Shah
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee Address: US DC Washington
- Agent Lawrence E. Anderson
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/93 ; H01L29/04 ; H01L29/205

Abstract:
An electronic device comprising a substrate; a pair of stacks of polar semiconductor materials which create a charge by spontaneous and/or piezoelectric polarization; one of the pair of stacks having a spontaneous and/or piezoelectric polarity which is in a direction opposite to the other of the pair of stacks; whereby due to the opposing polarities, the polarization is balanced. A method of substantially eliminating the bias required to offset polarization charges in an electronic device having a heterobarrier comprising providing a substrate; growing at least one pair of stacks of semiconductor materials; one of the pair of stacks having a spontaneous and/or piezoelectric polarity which is opposite to the other of the pair of stacks; whereby due to the opposing polarities, the polarization is balanced to substantially eliminate the need for a voltage bias.
Public/Granted literature
- US20130292683A1 Semiconductor Heterobarrier Electron Device And Method of Making Public/Granted day:2013-11-07
Information query
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