Invention Grant
- Patent Title: Manganese oxide thin film and oxide laminate
- Patent Title (中): 氧化锰薄膜和氧化层压板
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Application No.: US14365442Application Date: 2012-12-07
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Publication No.: US09166148B2Publication Date: 2015-10-20
- Inventor: Yasushi Ogimoto
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2012-009651 20120120
- International Application: PCT/JP2012/081759 WO 20121207
- International Announcement: WO2013/108507 WO 20130725
- Main IPC: H01L43/10
- IPC: H01L43/10 ; C30B29/22 ; C30B29/68 ; H01L49/00 ; C01G45/12 ; C30B23/02 ; H01L21/02

Abstract:
A manganese oxide thin film is formed on a plane of a substrate and has a composition RMnO3, where R is at least one and preferably two trivalent rare earth elements selected from lanthanoids, and where both R and Mn form the same atomic layer parallel to the plane of the substrate. An oxide laminate, includes the manganese oxide thin film; and at least one strongly-correlated oxide thin film that is contiguous to the manganese oxide thin film, wherein a total thickness, t, of the oxide laminate, a thickness, tm, of the manganese oxide thin film, and a thickness, t1, of the strongly-correlated oxide thin film satisfy a relation, relative to a critical thickness, tc, by which the strongly-correlated oxide thin film has a metallic phase, as follows: t=tm+t1>tc and t1
Public/Granted literature
- US20140374749A1 MANGANESE OXIDE THIN FILM AND OXIDE LAMINATE Public/Granted day:2014-12-25
Information query
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