Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13892665Application Date: 2013-05-13
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Publication No.: US09167699B2Publication Date: 2015-10-20
- Inventor: Yoshikazu Takamiya , Kazunaga Onishi , Yoshihiro Kodaira
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2010-255762 20101116
- Main IPC: H05K1/16
- IPC: H05K1/16 ; H01L23/48 ; H01L23/52 ; H05K1/18 ; H01L23/043 ; H01L25/07 ; H05K1/02 ; H01L23/373 ; H01L23/498 ; H01L25/18 ; H01L23/00

Abstract:
Aspects of the invention are directed to a power module including a metal base, an insulating substrate which is attached to the metal base, a semiconductor chip and a control terminal which are attached to a circuit pattern of the insulating substrate, and a resin case which is attached to the metal base. The control terminal can include a penetration portion which penetrates a cover of the resin case, an L-shaped processed portion which is connected to the penetration portion, and a connection portion which is connected to the L-shaped processed portion. A protrusion portion can be installed in a portion of the control terminal, which penetrates the cover. The protrusion portion can be in contact with a protrusion receiving portion which is configured with a front surface of the cover. The L-shaped processed portion can be in contact with a convex portion in a rear surface of the cover.
Public/Granted literature
- US20130250535A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-09-26
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