Invention Grant
US09170933B2 Wear-level of cells/pages/sub-pages/blocks of a memory 有权
存储器的单元/页/子页/块的磨损级别

Wear-level of cells/pages/sub-pages/blocks of a memory
Abstract:
A method for wear-leveling cells, pages, sub-pages or blocks of a memory such as a flash memory includes receiving (S10) a chunk of data to be written on the cell, page, sub-page or block of the memory; counting (S40), in the received chunk of data, a number of times a given type of binary data ‘0’ or ‘1’ is to be written; and distributing (S50) the writing of the received chunk of data among cells, pages, sub-pages or blocks of the memory such as to wear-level the memory with respect to the number of the given type of binary data ‘0’ or ‘1’ counted in the chunk of data to be written.
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