Invention Grant
- Patent Title: Electronic elements based on quasitwo-dimensional electron/hole gas at charged domain walls in ferroelectrics
- Patent Title (中): 基于铁电体带电域壁上的准二维电子/空穴气体的电子元件
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Application No.: US14256391Application Date: 2014-04-18
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Publication No.: US09171602B2Publication Date: 2015-10-27
- Inventor: Tomas Sluka , Alexander Tagantsev
- Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Applicant Address: CH Lausanne
- Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Current Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Current Assignee Address: CH Lausanne
- Agency: Nixon & Vanderhye, PC
- Priority: EPPCT/EP2013/058235 20130419
- Main IPC: H01L31/02
- IPC: H01L31/02 ; G11B5/65 ; H01L29/94 ; G11C11/22 ; H01L45/00
Abstract:
The present invention relates to a device including a ferroic material having a ferroelectric order parameter and including at least two domains, as well as a first and second electrode in electrical contact with the ferroic material. The device is configured to form a head-to-head polarization orientation or a tail-to-tail polarization orientation at an interface between the two domains to form a charged domain wall at said interface and between the first and second electrodes. The present invention relates to a corresponding method for operating such a device.
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