Invention Grant
- Patent Title: High efficiency on-chip 3D transformer structure
- Patent Title (中): 高效率片上3D变压器结构
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Application No.: US13950947Application Date: 2013-07-25
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Publication No.: US09171663B2Publication Date: 2015-10-27
- Inventor: Robert L. Barry , Robert A. Groves , Venkata Nr. Vanukuru
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES U.S. 2 LLC
- Current Assignee: GLOBALFOUNDRIES U.S. 2 LLC
- Current Assignee Address: KY Grand Cayman
- Agency: Tutunjian & Bitetto, P.C.
- Main IPC: H01F5/00
- IPC: H01F5/00 ; H01F27/28 ; H01L27/08

Abstract:
An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track includes first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including a plurality of adjacent turns of one or more radii within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups.
Public/Granted literature
- US20150028987A1 HIGH EFFICIENCY ON-CHIP 3D TRANSFORMER STRUCTURE Public/Granted day:2015-01-29
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