Invention Grant
US09171717B2 Method for manufacturing a group III nitride substrate using a chemical lift-off process
有权
使用化学剥离工艺制造III族氮化物衬底的方法
- Patent Title: Method for manufacturing a group III nitride substrate using a chemical lift-off process
- Patent Title (中): 使用化学剥离工艺制造III族氮化物衬底的方法
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Application No.: US13877082Application Date: 2011-11-04
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Publication No.: US09171717B2Publication Date: 2015-10-27
- Inventor: Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
- Applicant: Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
- Applicant Address: KR Gwangju
- Assignee: KOREA PHOTONICS TECHNOLOGY INSTITUTE
- Current Assignee: KOREA PHOTONICS TECHNOLOGY INSTITUTE
- Current Assignee Address: KR Gwangju
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2010-0110517 20101108
- International Application: PCT/KR2011/008370 WO 20111104
- International Announcement: WO2012/064050 WO 20120518
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/02 ; H01L33/00 ; H01L29/04
Abstract:
The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.
Public/Granted literature
- US20130193558A1 METHOD FOR MANUFACTURING A GROUP III NITRIDE SUBSTRATE USING A CHEMICAL LIFT-OFF PROCESS Public/Granted day:2013-08-01
Information query
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