Invention Grant
- Patent Title: Substrate processing apparatus and method for manufacturing semiconductor device
- Patent Title (中): 基板处理装置及半导体装置的制造方法
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Application No.: US13617783Application Date: 2012-09-14
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Publication No.: US09171724B2Publication Date: 2015-10-27
- Inventor: Shinji Yashima , Atsushi Umekawa
- Applicant: Shinji Yashima , Atsushi Umekawa
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAIELECTRIC INC.
- Current Assignee: HITACHI KOKUSAIELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2011-202165 20110915
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/263 ; H05B6/80

Abstract:
A substrate processing apparatus includes a process chamber which processes a substrate, a conductive substrate support table which is installed within the process chamber, a dielectric plate on which the substrate is mounted, the dielectric plate being placed on the substrate support table, a microwave generator which is installed outside the process chamber, and a microwave supplying unit which supplies a microwave generated by the microwave generator into the process chamber.
Public/Granted literature
- US20130072034A1 SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-03-21
Information query
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