Invention Grant
US09171738B2 Systems and methods for integrating bootstrap circuit elements in power transistors and other devices
有权
将自举电路元件集成在功率晶体管和其他器件中的系统和方法
- Patent Title: Systems and methods for integrating bootstrap circuit elements in power transistors and other devices
- Patent Title (中): 将自举电路元件集成在功率晶体管和其他器件中的系统和方法
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Application No.: US13718775Application Date: 2012-12-18
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Publication No.: US09171738B2Publication Date: 2015-10-27
- Inventor: Martin Vielemeyer , Sylvain Leomant , Milko Paolucci , Martin Poelzl
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: H01L21/385
- IPC: H01L21/385 ; H01L27/06 ; H01L21/38 ; H01L23/64 ; H01L27/07

Abstract:
Embodiments relate to bootstrap circuits integrated with at least one other device, such as a power transistor or other semiconductor device. In embodiments, the bootstrap circuit can comprise a bootstrap capacitor and a bootstrap diode, or the bootstrap circuit can comprise a bootstrap capacitor and a bootstrap transistor. The bootstrap capacitor comprises a semiconductor-based capacitor, as opposed to an electrolytic, ceramic or other capacitor, in embodiments. The integration of the bootstrap circuit with another circuit or device, such as a power transistor device in one embodiment, is at a silicon-level in embodiments, rather than as a module-like system-in-package of conventional approaches. In other words, the combination of the bootstrap circuit elements and power transistor or other device forms a system-on-silicon, or an integrated circuit, in embodiments, and additionally can be arranged in a single package.
Public/Granted literature
- US20140167069A1 SYSTEMS AND METHODS FOR INTEGRATING BOOTSTRAP CIRCUIT ELEMENTS IN POWER TRANSISTORS AND OTHER DEVICES Public/Granted day:2014-06-19
Information query
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