Method of forming transistor contacts

Invention Grant

US09171758B2 Method of forming transistor contacts 有权

Title translation: 形成晶体管触点的方法

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Patent Title: Method of forming transistor contacts
Patent Title (中): 形成晶体管触点的方法
Application No.: US14230410

Application Date: 2014-03-31
Publication No.: US09171758B2

Publication Date: 2015-10-27
Inventor: Murshed Mahmud Chowdhury , Woo-Hyeong Lee , Aimin Xing
Applicant: International Business Machines Corporation
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agent Catherine Ivers; Howard M. Cohn
Main IPC: H01L21/311
IPC: H01L21/311 ; H01L21/768

Abstract:

Embodiments of the present invention provide an improved method for forming transistor contacts. A sacrificial layer is deposited in a first set of contact cavities, and a capping layer is formed on the sacrificial layer. This protects the first set of contact cavities during formation of a second set of contact cavities. The sacrificial layer is then removed, and the first and second sets of contact cavities are filled with a conductive material.

Abstract(Chinese):

本发明的实施例提供了一种用于形成晶体管触点的改进方法。牺牲层沉积在第一组接触腔中，并且在牺牲层上形成覆盖层。这在第二组接触腔形成期间保护第一组接触腔。然后去除牺牲层，并且用导电材料填充第一组和第二组接触腔。

Public/Granted literature

US20150279734A1 METHOD OF FORMING TRANSISTOR CONTACTS Public/Granted day:2015-10-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀