Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
- Patent Title (中): 半导体器件及其制造方法
-
Application No.: US13666559Application Date: 2012-11-01
-
Publication No.: US09171762B2Publication Date: 2015-10-27
- Inventor: Yu-Lien Huang , Zhao-Cheng Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L29/66 ; H01L29/04 ; H01L29/165 ; H01L21/02 ; H01L29/49
Abstract:
A semiconductor device and a method for fabricating the semiconductor device are disclosed. A gate stack is formed over a surface of the substrate. A recess cavity is formed in the substrate adjacent to the gate stack. A first epitaxial (epi) material is then formed in the recess cavity. A second epi material is formed over the first epi material. A portion of the second epi material is removed by a removing process. The disclosed method provides an improved method by providing a second epi material and the removing process for forming the strained feature, therefor, to enhance carrier mobility and upgrade the device performance.
Public/Granted literature
- US20140117456A1 Semiconductor Device and Fabrication Method Thereof Public/Granted day:2014-05-01
Information query
IPC分类:
