Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14239042Application Date: 2012-09-03
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Publication No.: US09171768B2Publication Date: 2015-10-27
- Inventor: Yoshikazu Takamiya , Yoshihiro Kodaira , Kazunaga Onishi
- Applicant: Yoshikazu Takamiya , Yoshihiro Kodaira , Kazunaga Onishi
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agent Manabu Kanesaka
- Priority: JP2011-213574 20110928
- International Application: PCT/JP2012/072396 WO 20120903
- International Announcement: WO2013/047101 WO 20130404
- Main IPC: H01L23/04
- IPC: H01L23/04 ; H01L23/055 ; H01L23/498 ; H01L23/049 ; H01L21/52 ; H01L23/00 ; H01L23/373 ; H01L25/07

Abstract:
A semiconductor device includes an insulating substrate joined with a semiconductor chip, a case covering a surface of the insulating substrate where the semiconductor chip is joined, and a control terminal in which one end portion is electrically connected to the semiconductor chip, and another end portion passes through the case and is exposed to outside of the case. A portion of the control terminal exposed to the outside of the case includes a cut-out section where a part of the exposed portion is cut out, and a blocking section formed by bending a portion surrounded by the cut-out section and remaining on the control terminal. The blocking section contacts the case from the outside of the case and blocks a movement of the control terminal.
Public/Granted literature
- US20140210067A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-07-31
Information query
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