Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US13827669Application Date: 2013-03-14
-
Publication No.: US09171772B2Publication Date: 2015-10-27
- Inventor: Taketoshi Shikano
- Applicant: Taketoshi Shikano
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2012-185354 20120824
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L25/07 ; H01L23/31

Abstract:
A semiconductor device comprises: a semiconductor package having a top surface, a bottom surface, and a through hole provided from the top surface to the bottom surface; and an electrode inserted into the through hole of the semiconductor package. The semiconductor package includes: an insulating substrate; a semiconductor chip on the insulating substrate; an electrode pattern on the insulating substrate and connected to the semiconductor chip; a resin sealing the insulating substrate, the semiconductor chip, and the electrode pattern; and an electrode section on an inner wall of the through hole and connected to the electrode pattern. The through hole penetrates the insulating substrate and the resin. The electrode inserted into the through hole is connected to the electrode section inside the semiconductor package.
Public/Granted literature
- US20140054751A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-02-27
Information query
IPC分类: