Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14015726Application Date: 2013-08-30
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Publication No.: US09171817B2Publication Date: 2015-10-27
- Inventor: Takeshi Miyakawa
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2013-130030 20130620
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00

Abstract:
A semiconductor device includes a semiconductor chip having an electrode, a connector having a chip contact surface, an interconnecting portion, and an external electrode terminal contact surface, the chip contact surface being electrically connected to the electrode, and a first connection material disposed between the chip contact surface and the electrode, the first connecting material having a surface area that is greater than a surface area of the chip contact surface.
Public/Granted literature
- US20140374926A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-12-25
Information query
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