Invention Grant
US09171848B2 Deep trench MIM capacitor and moat isolation with epitaxial semiconductor wafer scheme
有权
深沟槽MIM电容器和外延半导体晶圆方案的护城河隔离
- Patent Title: Deep trench MIM capacitor and moat isolation with epitaxial semiconductor wafer scheme
- Patent Title (中): 深沟槽MIM电容器和外延半导体晶圆方案的护城河隔离
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Application No.: US14087684Application Date: 2013-11-22
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Publication No.: US09171848B2Publication Date: 2015-10-27
- Inventor: Thomas Walter Dyer , Herbert Lei Ho , Jin Liu
- Applicant: International Business Machines Corporation
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Whitham Curtis Christofferson & Cook, PC
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L27/108 ; H01L21/762 ; H01L27/12 ; H01L49/02
Abstract:
An integrated circuit structure provides at least one metal-insulator-metal (MIM) capacitor and a moat isolation structure wherein the number of processes required is substantially minimized and the formation of the MIM capacitor and the moat isolation structure effectively decouple while the number of processes common to the moat isolation structure and the MIM capacitor are maximized. Additional required processes are non-critical and tolerant of overlay positioning error.
Public/Granted literature
- US20150145102A1 Methods for Deep Trench MIM Capacitor Moat Isolation with N+ Epitaxial Semiconductor Wafer Scheme Public/Granted day:2015-05-28
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