Invention Grant
US09171949B1 Semiconductor device including superjunction structure formed using angled implant process
有权
半导体器件包括使用成角度的注入工艺形成的超结构结构
- Patent Title: Semiconductor device including superjunction structure formed using angled implant process
- Patent Title (中): 半导体器件包括使用成角度的注入工艺形成的超结构结构
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Application No.: US14495817Application Date: 2014-09-24
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Publication No.: US09171949B1Publication Date: 2015-10-27
- Inventor: Karthik Padmanabhan , Madhur Bobde , Lingpeng Guan , Lei Zhang , Hamza Yilmaz
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/47 ; H01L21/336 ; H01L21/311 ; H01L29/78 ; H01L29/06
Abstract:
A semiconductor device includes a superjunction structure formed using simultaneous N and P angled implants into the sidewall of a trench. The simultaneous N and P angled implants use different implant energies and dopants of different diffusion rate so that after annealing, alternating N and P thin semiconductor regions are formed. The alternating N and P thin semiconductor regions form a superjunction structure where a balanced space charge region is formed to enhance the breakdown voltage characteristic of the semiconductor device.
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